Electrons from Emitter to Base:
1.The emitter-base junction is forward-biased, reducing the depletion region at this junction.
2.A high concentration of electrons in the heavily doped emitter flows into the lightly doped, thin base region.
3.These electrons are minority carriers in the P-type base.
Electrons from Base to Collector:
1.The collector-base junction is reverse-biased, creating a strong electric field.
2.Most of the electrons that enter the base are swept into the collector by this electric field before they can recombine with holes in the base.